BD939 Todos los transistores

 

BD939 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD939
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO220
 

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BD939 Datasheet (PDF)

 ..1. Size:331K  philips
 bd933 bd935 bd937 bd939 bd941.pdf pdf_icon

BD939

 ..2. Size:211K  inchange semiconductor
 bd933 bd935 bd937 bd939 bd941.pdf pdf_icon

BD939

isc Silicon NPN Power Transistor BD933/935/937/939/941DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = 150mAFE CComplement to Type BD934/936/938/940/942Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in output stages of audio and televisionamplifier circuits where high peak powers can occur.ABSOLUTE MAXIMUM

 0.1. Size:213K  inchange semiconductor
 bd933f bd935f bd937f bd939f bd941f.pdf pdf_icon

BD939

isc Silicon NPN Power Transistor BD933F/935F/937F/939F/941FDESCRIPTIONDC Current Gain-: h = 40(Min)@ I = 150mAFE CComplement to Type BD934F/936F/938F/940F/942FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in output stages of audio and televisionamplifier circuits where high peak powers can occur.ABSOLU

Otros transistores... BD935 , BD935F , BD936 , BD936F , BD937 , BD937F , BD938 , BD938F , BC556 , BD939F , BD940 , BD940F , BD941 , BD941F , BD942 , BD942F , BD943 .

 

 
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