BD939 Todos los transistores

 

BD939 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD939
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO220
 

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BD939 Datasheet (PDF)

 ..1. Size:331K  philips
 bd933 bd935 bd937 bd939 bd941.pdf pdf_icon

BD939

 ..2. Size:211K  inchange semiconductor
 bd933 bd935 bd937 bd939 bd941.pdf pdf_icon

BD939

isc Silicon NPN Power Transistor BD933/935/937/939/941DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = 150mAFE CComplement to Type BD934/936/938/940/942Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in output stages of audio and televisionamplifier circuits where high peak powers can occur.ABSOLUTE MAXIMUM

 0.1. Size:213K  inchange semiconductor
 bd933f bd935f bd937f bd939f bd941f.pdf pdf_icon

BD939

isc Silicon NPN Power Transistor BD933F/935F/937F/939F/941FDESCRIPTIONDC Current Gain-: h = 40(Min)@ I = 150mAFE CComplement to Type BD934F/936F/938F/940F/942FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in output stages of audio and televisionamplifier circuits where high peak powers can occur.ABSOLU

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: FJV4105R | RN1414

 

 
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