BD942 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD942
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 140 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3 MHz
Ganancia de corriente contínua (hFE): 40
Encapsulados: TO220
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BD942 datasheet
bd942.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistors BD942 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Complement to Type BD941 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE
bd934 bd936 bd938 bd940 bd942.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor BD934/936/938/940/942 DESCRIPTION DC Current Gain- h = 40(Min)@ I = -150mA FE C Complement to Type BD933/935/937/939/941 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stages of audio and television amplifier circuits where high peak powers can
bd934f bd936f bd938f bd940f bd942f.pdf
isc Silicon PNP Power Transistor BD934F/936F/938F/940F/942F DESCRIPTION DC Current Gain- h = 40(Min)@ I = -150mA FE C Complement to Type BD933F/935F/937F/939F/941F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOL
Otros transistores... BD938 , BD938F , BD939 , BD939F , BD940 , BD940F , BD941 , BD941F , 2SD669A , BD942F , BD943 , BD943F , BD944 , BD944F , BD945 , BD945F , BD946 .
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