BD951 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD951
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3 MHz
Ganancia de corriente contínua (hFE): 40
Encapsulados: TO220
Búsqueda de reemplazo de BD951
- Selecciónⓘ de transistores por parámetros
BD951 datasheet
bd949 bd950 bd951 bd952 bd953 bd954 bd955 bd956.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 NPN PLASTIC POWER TRANSISTORS BD950, 952, 954, 956 PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2
bd951.pdf
isc Silicon NPN Power Transistor BD951 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO DC Current Gain- h = 40(Min)@ I = 500mA FE C Complement to Type BD952 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
bd949f bd951f bd953f bd955f.pdf
isc Silicon NPN Power Transistor BD949F/951F/953F/955F DESCRIPTION DC Current Gain- h = 40(Min)@ I = 500mA FE C Complement to Type BD950F/952F/954F/956F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT BD94
Otros transistores... BD947 , BD947F , BD948 , BD948F , BD949 , BD949F , BD950 , BD950F , D882P , BD951F , BD952 , BD952F , BD953 , BD953F , BD954 , BD954F , BD955 .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sc1419 datasheet | 2n4249 datasheet | tip130 | se9302 transistor | fr5305 datasheet | y2 transistor | 40n06 | bc108b