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2N2907AUB . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N2907AUB
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.4 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 8 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: LCC3

 Búsqueda de reemplazo de transistor bipolar 2N2907AUB

 

2N2907AUB Datasheet (PDF)

 ..1. Size:242K  optek
2n2907aub.pdf

2N2907AUB 2N2907AUB

Product Bulletin JANTX, JANTXV, 2N2907AUBSeptember 1996Surface Mount PNP General Purpose TransistorType JANTX, JANTXV, 2N2907AUBFeatures Absolute Maximum Ratings (TA = 25o C unless otherwise noted)Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 VCeramic surface mount packageCollector-Emitter Voltage. . . . . .

 ..2. Size:99K  microsemi
2n2906a 2n2907a 2n2906al 2n2907al 2n2906aua 2n2907aua 2n2906aub 2n2907aub 2n2906aubc 2n2907aubc.pdf

2N2907AUB 2N2907AUB

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2907A JAN 2N2906AL 2N2907AL JANTX 2N2906AUA 2N2907AUA JANTXV 2N2906AUB 2N2907AUB JANS 2N2906AUBC * 2N2907AUBC * * Available to JANS qua

 0.1. Size:100K  microsemi
2n2907aubc.pdf

2N2907AUB 2N2907AUB

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS JANSM 3K Rads (Si) 2N2906A 2N2907AJANSD 10K Rads (Si) 2N2906AL 2N2907ALJANSP 30K Rads (Si) 2N2906AUA 2N2907AUAJANS

 6.1. Size:95K  optek
2n2907aua.pdf

2N2907AUB 2N2907AUB

 6.2. Size:89K  semelab
2n2907aua.pdf

2N2907AUB 2N2907AUB

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AUA Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt

 6.3. Size:265K  first silicon
2n2907au.pdf

2N2907AUB 2N2907AUB

SEMICONDUCTOR2N2907AUTECHNICAL DATAGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifier3applications. They are housed in the SC-323/SC-70 package whichis designed for low power surface mount applications.1Features2compliance with RoHS requirements. We declare that the material of product SC-70 / SOT 323 ORDERING IN

Otros transistores... 2N2906ADCSM , 2N2906AQF , 2N2906CSM , 2N2907 , 2N2907A , 2N2907ACSM , 2N2907ACSM4 , 2N2907AQF , SS8050 , 2N2907CSM , 2N2908 , 2N2909 , 2N291 , 2N2910 , 2N2911 , 2N2912 , 2N2913 .

 

 
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