BDS16SM
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDS16SM
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 90
W
Tensión colector-emisor (Vce): 120
V
Corriente del colector DC máxima (Ic): 15
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30
MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
TO252
Búsqueda de reemplazo de transistor bipolar BDS16SM
BDS16SM
Datasheet (PDF)
0.1. Size:41K semelab
bds16smd05.pdf
BDS16 BDS16SMD BDS16SMD05BDS17 BDS17SMD BDS17SMD05MECHANICAL DATASILICON NPN EPITAXIAL BASEDimensions in mmIN TO220 METAL ANDSMD CERAMIC SURFACE MOUNTPACKAGESFEATURES HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVELS FULLY ISOLATED (METAL VERSION)APPLICATIONS POWER LINEAR AND SWITCHINGTO220M
0.2. Size:41K semelab
bds16smd.pdf
BDS16 BDS16SMD BDS16SMD05BDS17 BDS17SMD BDS17SMD05MECHANICAL DATASILICON NPN EPITAXIAL BASEDimensions in mmIN TO220 METAL ANDSMD CERAMIC SURFACE MOUNTPACKAGESFEATURES HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVELS FULLY ISOLATED (METAL VERSION)APPLICATIONS POWER LINEAR AND SWITCHINGTO220M
9.1. Size:44K semelab
bds16xsmd05.pdf
BDS16X BDS16XSMD BDS16XSMD05BDS17X BDS17XSMD BDS17XSMD05MECHANICAL DATADimensions in mmSILICON NPN EPITAXIAL BASE4.610.6IN TO220 METAL AND0.8SMD CERAMIC SURFACE MOUNT3.6PACKAGESDia.FEATURES1 2 3 HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVELS1.0 FULLY ISOLATED (METAL VERSION)2.54 2.
9.2. Size:44K semelab
bds16x.pdf
BDS16X BDS16XSMD BDS16XSMD05BDS17X BDS17XSMD BDS17XSMD05MECHANICAL DATADimensions in mmSILICON NPN EPITAXIAL BASE4.610.6IN TO220 METAL AND0.8SMD CERAMIC SURFACE MOUNT3.6PACKAGESDia.FEATURES1 2 3 HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVELS1.0 FULLY ISOLATED (METAL VERSION)2.54 2.
9.3. Size:44K semelab
bds16xsmd.pdf
BDS16X BDS16XSMD BDS16XSMD05BDS17X BDS17XSMD BDS17XSMD05MECHANICAL DATADimensions in mmSILICON NPN EPITAXIAL BASE4.610.6IN TO220 METAL AND0.8SMD CERAMIC SURFACE MOUNT3.6PACKAGESDia.FEATURES1 2 3 HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVELS1.0 FULLY ISOLATED (METAL VERSION)2.54 2.
9.4. Size:210K inchange semiconductor
bds16.pdf
NCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor BDS16DESCRIPTIONHigh Voltage: V = 120V(Min)CEVLow Saturation Voltage-: V = 1.5V(Max)@ I = 4ACE(sat) CHigh ReliablityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power linear and switching application andGeneral puepose p
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