BDS16SM Todos los transistores

 0.1. Size:41K  semelab
 bds16smd05.pdf

BDS16 BDS16SMD BDS16SMD05 BDS17 BDS17SMD BDS17SMD05 MECHANICAL DATA SILICON NPN EPITAXIAL BASE Dimensions in mm IN TO220 METAL AND SMD CERAMIC SURFACE MOUNT PACKAGES FEATURES HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVELS FULLY ISOLATED (METAL VERSION) APPLICATIONS POWER LINEAR AND SWITCHING TO220M

 0.2. Size:41K  semelab
 bds16smd.pdf

BDS16 BDS16SMD BDS16SMD05 BDS17 BDS17SMD BDS17SMD05 MECHANICAL DATA SILICON NPN EPITAXIAL BASE Dimensions in mm IN TO220 METAL AND SMD CERAMIC SURFACE MOUNT PACKAGES FEATURES HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVELS FULLY ISOLATED (METAL VERSION) APPLICATIONS POWER LINEAR AND SWITCHING TO220M

 9.1. Size:44K  semelab
 bds16xsmd05.pdf

BDS16X BDS16XSMD BDS16XSMD05 BDS17X BDS17XSMD BDS17XSMD05 MECHANICAL DATA Dimensions in mm SILICON NPN EPITAXIAL BASE 4.6 10.6 IN TO220 METAL AND 0.8 SMD CERAMIC SURFACE MOUNT 3.6 PACKAGES Dia. FEATURES 1 2 3 HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVELS 1.0 FULLY ISOLATED (METAL VERSION) 2.54 2.

 9.2. Size:44K  semelab
 bds16x.pdf

BDS16X BDS16XSMD BDS16XSMD05 BDS17X BDS17XSMD BDS17XSMD05 MECHANICAL DATA Dimensions in mm SILICON NPN EPITAXIAL BASE 4.6 10.6 IN TO220 METAL AND 0.8 SMD CERAMIC SURFACE MOUNT 3.6 PACKAGES Dia. FEATURES 1 2 3 HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVELS 1.0 FULLY ISOLATED (METAL VERSION) 2.54 2.

 9.3. Size:44K  semelab
 bds16xsmd.pdf

BDS16X BDS16XSMD BDS16XSMD05 BDS17X BDS17XSMD BDS17XSMD05 MECHANICAL DATA Dimensions in mm SILICON NPN EPITAXIAL BASE 4.6 10.6 IN TO220 METAL AND 0.8 SMD CERAMIC SURFACE MOUNT 3.6 PACKAGES Dia. FEATURES 1 2 3 HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVELS 1.0 FULLY ISOLATED (METAL VERSION) 2.54 2.

 9.4. Size:210K  inchange semiconductor
 bds16.pdf

NCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDS16 DESCRIPTION High Voltage V = 120V(Min) CEV Low Saturation Voltage- V = 1.5V(Max)@ I = 4A CE(sat) C High Reliablity Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power linear and switching application and General puepose p