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BDS19SM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BDS19SM
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 90 W
   Tensión colector-emisor (Vce): 150 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 30 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO252
 

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BDS19SM Datasheet (PDF)

 0.1. Size:76K  semelab
 bds19smd05.pdf pdf_icon

BDS19SM

BDS18 BDS18SMD BDS18SMD05BDS19 BDS19SMD BDS19SMD05SILICON PNPMECHANICAL DATA (Dimensions in mm)EPITAXIAL BASE INTO220 METAL AND4.610.60.8SMD CERAMIC SURFACE MOUNTPACKAGES3.6Dia.FEATURES HERMETIC METAL OR CERAMIC1 2 3PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS1.0 SCREENING TO CECC LEVELS2.54 2.70 FULLY ISOLATED (METAL VERSION)

 0.2. Size:76K  semelab
 bds19smd.pdf pdf_icon

BDS19SM

BDS18 BDS18SMD BDS18SMD05BDS19 BDS19SMD BDS19SMD05SILICON PNPMECHANICAL DATA (Dimensions in mm)EPITAXIAL BASE INTO220 METAL AND4.610.60.8SMD CERAMIC SURFACE MOUNTPACKAGES3.6Dia.FEATURES HERMETIC METAL OR CERAMIC1 2 3PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS1.0 SCREENING TO CECC LEVELS2.54 2.70 FULLY ISOLATED (METAL VERSION)

 9.1. Size:213K  inchange semiconductor
 bds19.pdf pdf_icon

BDS19SM

isc Silicon PNP Power Transistor BDS19DESCRIPTIONHigh Voltage: V = -150V(Min)CEVLow Saturation Voltage-: V = -1.5V(Max)@ I = -4ACE(sat) CHigh ReliablityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power linear and switching application andGeneral puepose power.ABSOLUTE MAXIMUM RATINGS(T =25)a

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: RN2611 | HA22X | FP1J3P | 2N923 | SST3904 | CSC1213AC

 

 
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