BDS28C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDS28C
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-emisor (Vce): 120 V
Corriente del colector DC máxima (Ic): 30 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4 MHz
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta: ISOWATT218
Búsqueda de reemplazo de transistor bipolar BDS28C
BDS28C Datasheet (PDF)
bds28cn2.pdf
COMPLEMENTARY POWER DARLINGTON BDS28A/B/CN2 BDS29A/B/CN2 High DC Current Gain Hermetic Ceramic Surface Mount Package Screening Options Available Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) PNP BDS28A BDS28B BDS28C NPN BDS29A BDS29B BDS29C VCBO Collector Base Voltage 60V 90V 120V
bds28cm3a.pdf
COMPLEMENTARY POWER DARLINGTON BDS28A/B/CM3A BDS29A/B/CM3A High DC Current Gain Hermetic Isolated TO-254AA Package Screening Options Available Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) PNP BDS28A BDS28B BDS28C NPN BDS29A BDS29B BDS29C VCBO Collector Base Voltage 60V 90V 120V VC
bds28an2.pdf
COMPLEMENTARY POWER DARLINGTON BDS28A/B/CN2 BDS29A/B/CN2 High DC Current Gain Hermetic Ceramic Surface Mount Package Screening Options Available Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) PNP BDS28A BDS28B BDS28C NPN BDS29A BDS29B BDS29C VCBO Collector Base Voltage 60V 90V 120V
bds28bn2.pdf
COMPLEMENTARY POWER DARLINGTON BDS28A/B/CN2 BDS29A/B/CN2 High DC Current Gain Hermetic Ceramic Surface Mount Package Screening Options Available Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) PNP BDS28A BDS28B BDS28C NPN BDS29A BDS29B BDS29C VCBO Collector Base Voltage 60V 90V 120V
bds28bsmd.pdf
BDS28BSMDDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 90V IC = 30A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (
bds28bm3a.pdf
COMPLEMENTARY POWER DARLINGTON BDS28A/B/CM3A BDS29A/B/CM3A High DC Current Gain Hermetic Isolated TO-254AA Package Screening Options Available Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) PNP BDS28A BDS28B BDS28C NPN BDS29A BDS29B BDS29C VCBO Collector Base Voltage 60V 90V 120V VC
bds28am3a.pdf
COMPLEMENTARY POWER DARLINGTON BDS28A/B/CM3A BDS29A/B/CM3A High DC Current Gain Hermetic Isolated TO-254AA Package Screening Options Available Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) PNP BDS28A BDS28B BDS28C NPN BDS29A BDS29B BDS29C VCBO Collector Base Voltage 60V 90V 120V VC
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: ME2002 | F120A | 2SA1353F | 2SD330E
History: ME2002 | F120A | 2SA1353F | 2SD330E
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050