BDS28C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDS28C
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-emisor (Vce): 120 V
Corriente del colector DC máxima (Ic): 30 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4 MHz
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta: ISOWATT218
Búsqueda de reemplazo de transistor bipolar BDS28C
BDS28C Datasheet (PDF)
bds28cn2.pdf
COMPLEMENTARY POWER DARLINGTON BDS28A/B/CN2 BDS29A/B/CN2 High DC Current Gain Hermetic Ceramic Surface Mount Package Screening Options Available Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) PNP BDS28A BDS28B BDS28C NPN BDS29A BDS29B BDS29C VCBO Collector Base Voltage 60V 90V 120V
bds28cm3a.pdf
COMPLEMENTARY POWER DARLINGTON BDS28A/B/CM3A BDS29A/B/CM3A High DC Current Gain Hermetic Isolated TO-254AA Package Screening Options Available Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) PNP BDS28A BDS28B BDS28C NPN BDS29A BDS29B BDS29C VCBO Collector Base Voltage 60V 90V 120V VC
bds28an2.pdf
COMPLEMENTARY POWER DARLINGTON BDS28A/B/CN2 BDS29A/B/CN2 High DC Current Gain Hermetic Ceramic Surface Mount Package Screening Options Available Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) PNP BDS28A BDS28B BDS28C NPN BDS29A BDS29B BDS29C VCBO Collector Base Voltage 60V 90V 120V
bds28bn2.pdf
COMPLEMENTARY POWER DARLINGTON BDS28A/B/CN2 BDS29A/B/CN2 High DC Current Gain Hermetic Ceramic Surface Mount Package Screening Options Available Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) PNP BDS28A BDS28B BDS28C NPN BDS29A BDS29B BDS29C VCBO Collector Base Voltage 60V 90V 120V
bds28bsmd.pdf
BDS28BSMDDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 90V IC = 30A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (
bds28bm3a.pdf
COMPLEMENTARY POWER DARLINGTON BDS28A/B/CM3A BDS29A/B/CM3A High DC Current Gain Hermetic Isolated TO-254AA Package Screening Options Available Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) PNP BDS28A BDS28B BDS28C NPN BDS29A BDS29B BDS29C VCBO Collector Base Voltage 60V 90V 120V VC
bds28am3a.pdf
COMPLEMENTARY POWER DARLINGTON BDS28A/B/CM3A BDS29A/B/CM3A High DC Current Gain Hermetic Isolated TO-254AA Package Screening Options Available Designed for General Purpose Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) PNP BDS28A BDS28B BDS28C NPN BDS29A BDS29B BDS29C VCBO Collector Base Voltage 60V 90V 120V VC
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: BTA2039J3 | BDV64B
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D