BDT29DF . Datasheet. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

BDT29DF Datasheet (PDF)

..1. Size:214K inchange semiconductor
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isc Silicon NPN Power Transistors BDT29F/AF/BF/CF/DFDESCRIPTIONDC Current Gain -h = 40(Min)@ I = 0.4AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- BDT29F; 60V(Min)- BDT29AFCEO(SUS)80V(Min)- BDT29BF; 100V(Min)- BDT29CF120V(Min)- BDT29DFComplement to Type BDT30F/AF/BF/CF/DFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationA

9.1. Size:211K inchange semiconductor
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isc Silicon NPN Power Transistors BDT29/A/B/CDESCRIPTIONDC Current Gain -h = 40(Min)@ I = 0.4AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- BDT29; 60V(Min)- BDT29ACEO(SUS)80V(Min)- BDT29B; 100V(Min)- BDT29CComplement to Type BDT30/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in out

9.2. Size:160K inchange semiconductor
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT29F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= 0.4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT29F; 60V(Min)- BDT29AF 80V(Min)- BDT29BF; 100V(Min)- BDT29CF 120V(Min)- BDT29DF Complement to Type BDT30F/AF/BF/CF/DF APPLICATIONS Designed for use

9.3. Size:158K inchange semiconductor
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT29/A/B/C DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= 0.4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT29; 60V(Min)- BDT29A 80V(Min)- BDT29B; 100V(Min)- BDT29C Complement to Type BDT30/A/B/C APPLICATIONS Designed for use in output stages of audio and televisio

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .