BDT30A Todos los transistores

 ..1. Size:214K  inchange semiconductor
 bdt30 bdt30a bdt30b bdt30c.pdf

isc Silicon PNP Power Transistors BDT30/A/B/C DESCRIPTION DC Current Gain -h = 40(Min)@ I = -0.4A FE C Collector-Emitter Sustaining Voltage- V = -40V(Min)- BDT30; -60V(Min)- BDT30A CEO(SUS) -80V(Min)- BDT30B; -100V(Min)- BDT30C Complement to Type BDT29/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use i

 0.1. Size:215K  inchange semiconductor
 bdt30f bdt30af bdt30bf bdt30cf bdt30df.pdf

isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF DESCRIPTION DC Current Gain -h = 40(Min)@ I = -0.4A FE C Collector-Emitter Sustaining Voltage- V = -40V(Min)- BDT30F; -60V(Min)- BDT30AF CEO(SUS) -80V(Min)- BDT30BF; -100V(Min)- BDT30CF -120V(Min)- BDT30DF Complement to Type BDT29F/AF/BF/CF/DF Minimum Lot-to-Lot variations for robust device performance and reliable operat

 9.1. Size:109K  inchange semiconductor
 bdt30f af bf cf df.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= -0.4A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF -120V(Min)- BDT30DF Complement to Type BDT29F/AF/BF/CF/DF APPLICATIONS Designed fo

 9.2. Size:158K  inchange semiconductor
 bdt30 a b c.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT30/A/B/C DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= -0.4A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -40V(Min)- BDT30; -60V(Min)- BDT30A -80V(Min)- BDT30B; -100V(Min)- BDT30C Complement to Type BDT29/A/B/C APPLICATIONS Designed for use in output stages of audio and tele