BDT30B Todos los transistores

 

BDT30B Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BDT30B

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 120 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 15

Encapsulados: TO220

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BDT30B datasheet

 ..1. Size:214K  inchange semiconductor
bdt30 bdt30a bdt30b bdt30c.pdf pdf_icon

BDT30B

isc Silicon PNP Power Transistors BDT30/A/B/C DESCRIPTION DC Current Gain -h = 40(Min)@ I = -0.4A FE C Collector-Emitter Sustaining Voltage- V = -40V(Min)- BDT30; -60V(Min)- BDT30A CEO(SUS) -80V(Min)- BDT30B; -100V(Min)- BDT30C Complement to Type BDT29/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use i

 0.1. Size:215K  inchange semiconductor
bdt30f bdt30af bdt30bf bdt30cf bdt30df.pdf pdf_icon

BDT30B

isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF DESCRIPTION DC Current Gain -h = 40(Min)@ I = -0.4A FE C Collector-Emitter Sustaining Voltage- V = -40V(Min)- BDT30F; -60V(Min)- BDT30AF CEO(SUS) -80V(Min)- BDT30BF; -100V(Min)- BDT30CF -120V(Min)- BDT30DF Complement to Type BDT29F/AF/BF/CF/DF Minimum Lot-to-Lot variations for robust device performance and reliable operat

 9.1. Size:109K  inchange semiconductor
bdt30f af bf cf df.pdf pdf_icon

BDT30B

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= -0.4A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF -120V(Min)- BDT30DF Complement to Type BDT29F/AF/BF/CF/DF APPLICATIONS Designed fo

 9.2. Size:158K  inchange semiconductor
bdt30 a b c.pdf pdf_icon

BDT30B

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT30/A/B/C DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= -0.4A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -40V(Min)- BDT30; -60V(Min)- BDT30A -80V(Min)- BDT30B; -100V(Min)- BDT30C Complement to Type BDT29/A/B/C APPLICATIONS Designed for use in output stages of audio and tele

Otros transistores... BDT29BF , BDT29C , BDT29CF , BDT29DF , BDT29F , BDT30 , BDT30A , BDT30AF , 2N2222 , BDT30BF , BDT30C , BDT30CF , BDT30DF , BDT30F , BDT31 , BDT31A , BDT31AF .

History: 2N1787

 

 

 


History: 2N1787

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