BDT30F Todos los transistores

 

BDT30F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BDT30F
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 14 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO220F
 

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BDT30F Datasheet (PDF)

 ..1. Size:109K  inchange semiconductor
 bdt30f af bf cf df.pdf pdf_icon

BDT30F

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= -0.4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF -120V(Min)- BDT30DF Complement to Type BDT29F/AF/BF/CF/DF APPLICATIONS Designed fo

 ..2. Size:215K  inchange semiconductor
 bdt30f bdt30af bdt30bf bdt30cf bdt30df.pdf pdf_icon

BDT30F

isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DFDESCRIPTIONDC Current Gain -h = 40(Min)@ I = -0.4AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)- BDT30F; -60V(Min)- BDT30AFCEO(SUS)-80V(Min)- BDT30BF; -100V(Min)- BDT30CF-120V(Min)- BDT30DFComplement to Type BDT29F/AF/BF/CF/DFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operat

 9.1. Size:158K  inchange semiconductor
 bdt30 a b c.pdf pdf_icon

BDT30F

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT30/A/B/C DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= -0.4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT30; -60V(Min)- BDT30A -80V(Min)- BDT30B; -100V(Min)- BDT30C Complement to Type BDT29/A/B/C APPLICATIONS Designed for use in output stages of audio and tele

 9.2. Size:214K  inchange semiconductor
 bdt30 bdt30a bdt30b bdt30c.pdf pdf_icon

BDT30F

isc Silicon PNP Power Transistors BDT30/A/B/CDESCRIPTIONDC Current Gain -h = 40(Min)@ I = -0.4AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)- BDT30; -60V(Min)- BDT30ACEO(SUS)-80V(Min)- BDT30B; -100V(Min)- BDT30CComplement to Type BDT29/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use i

MOSTRAR MÁS

Otros transistores... BDT30 , BDT30A , BDT30AF , BDT30B , BDT30BF , BDT30C , BDT30CF , BDT30DF , C5198 , BDT31 , BDT31A , BDT31AF , BDT31B , BDT31BF , BDT31C , BDT31CF , BDT31DF .

History: NSS1C300ET4G | 2SB1123R

 

 
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