BDT31DF Todos los transistores

 

BDT31DF Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BDT31DF

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-base (Vcb): 160 V

Tensión colector-emisor (Vce): 160 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO220F

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BDT31DF datasheet

 ..1. Size:231K  inchange semiconductor
bdt31f bdt31af bdt31bf bdt31cf bdt31df.pdf pdf_icon

BDT31DF

isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF DESCRIPTION DC Current Gain -h = 25(Min)@ I = 1.0A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min)- BDT31F; 60V(Min)- BDT31AF CEO(SUS) 80V(Min)- BDT31BF; 100V(Min)- BDT31CF 120V(Min)- BDT31DF Complement to Type BDT32F/AF/BF/CF/DF Minimum Lot-to-Lot variations for robust device performance and reliable operation A

 9.1. Size:229K  inchange semiconductor
bdt31 bdt31a bdt31b bdt31c.pdf pdf_icon

BDT31DF

isc Silicon NPN Power Transistors BDT31/A/B/C DESCRIPTION DC Current Gain -h = 25(Min)@ I = 1.0A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min)- BDT31; 60V(Min)- BDT31A CEO(SUS) 80V(Min)- BDT31B; 100V(Min)- BDT31C Complement to Type BDT32/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in aud

 9.2. Size:112K  inchange semiconductor
bdt31f af bf cf df.pdf pdf_icon

BDT31DF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= 1.0A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF 120V(Min)- BDT31DF Complement to Type BDT32F/AF/BF/CF/DF APPLICATIONS Designed for use

 9.3. Size:111K  inchange semiconductor
bdt31-a-b-c bdt31 a b c.pdf pdf_icon

BDT31DF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT31/A/B/C DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= 1.0A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A 80V(Min)- BDT31B; 100V(Min)- BDT31C Complement to Type BDT32/A/B/C APPLICATIONS Designed for use in audio output stages and general ampl

Otros transistores... BDT30F , BDT31 , BDT31A , BDT31AF , BDT31B , BDT31BF , BDT31C , BDT31CF , A1015 , BDT31F , BDT32 , BDT32A , BDT32AF , BDT32B , BDT32BF , BDT32C , BDT32CF .

History: 2SC495 | FMMT3642 | 2SB936

 

 

 


History: 2SC495 | FMMT3642 | 2SB936

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