BDT31F
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT31F
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 80
V
Corriente del colector DC máxima (Ic): 3
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3
MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta:
TO220F
Búsqueda de reemplazo de transistor bipolar BDT31F
BDT31F
Datasheet (PDF)
..1. Size:112K inchange semiconductor
bdt31f af bf cf df.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= 1.0A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF 120V(Min)- BDT31DF Complement to Type BDT32F/AF/BF/CF/DF APPLICATIONS Designed for use
..2. Size:231K inchange semiconductor
bdt31f bdt31af bdt31bf bdt31cf bdt31df.pdf
isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DFDESCRIPTIONDC Current Gain -h = 25(Min)@ I = 1.0AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- BDT31F; 60V(Min)- BDT31AFCEO(SUS)80V(Min)- BDT31BF; 100V(Min)- BDT31CF120V(Min)- BDT31DFComplement to Type BDT32F/AF/BF/CF/DFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationA
9.1. Size:229K inchange semiconductor
bdt31 bdt31a bdt31b bdt31c.pdf
isc Silicon NPN Power Transistors BDT31/A/B/CDESCRIPTIONDC Current Gain -h = 25(Min)@ I = 1.0AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- BDT31; 60V(Min)- BDT31ACEO(SUS)80V(Min)- BDT31B; 100V(Min)- BDT31CComplement to Type BDT32/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in aud
9.2. Size:111K inchange semiconductor
bdt31-a-b-c bdt31 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT31/A/B/C DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= 1.0A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A 80V(Min)- BDT31B; 100V(Min)- BDT31C Complement to Type BDT32/A/B/C APPLICATIONS Designed for use in audio output stages and general ampl
Otros transistores... BDT31
, BDT31A
, BDT31AF
, BDT31B
, BDT31BF
, BDT31C
, BDT31CF
, BDT31DF
, A1941
, BDT32
, BDT32A
, BDT32AF
, BDT32B
, BDT32BF
, BDT32C
, BDT32CF
, BDT32DF
.
