BDT41A Todos los transistores

 

BDT41A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BDT41A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 65 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO220
 

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BDT41A Datasheet (PDF)

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 bdt41 bdt41a bdt41b bdt41c.pdf pdf_icon

BDT41A

isc Silicon NPN Power Transistors BDT41/A/B/CDESCRIPTIONDC Current Gain -h = 30(Min)@ I = 0.3AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- BDT41; 60V(Min)- BDT41ACEO(SUS)80V(Min)- BDT41B; 100V(Min)- BDT41CComplement to Type BDT42/42A/42B/42CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use

 0.1. Size:214K  inchange semiconductor
 bdt41f bdt41af bdt41bf bdt41cf.pdf pdf_icon

BDT41A

isc Silicon NPN Power Transistors BDT41F/AF/BF/CFDESCRIPTIONDC Current Gain -h = 30(Min)@ I = 0.3AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- BDT41F; 60V(Min)- BDT41AFCEO(SUS)80V(Min)- BDT41BF; 100V(Min)- BDT41CFComplement to Type BDT42F/AF/BF/CFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned fo

 9.1. Size:107K  inchange semiconductor
 bdt41f-af-bf-cf bdt41f af bf cf.pdf pdf_icon

BDT41A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT41F/AF/BF/CF DESCRIPTIONDC Current Gain -hFE = 30(Min)@ IC= 0.3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT41F; 60V(Min)- BDT41AF 80V(Min)- BDT41BF; 100V(Min)- BDT41CF Complement to Type BDT42F/AF/BF/CF APPLICATIONS Designed for use in general purpose amplifer

 9.2. Size:158K  inchange semiconductor
 bdt41 a b c.pdf pdf_icon

BDT41A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT41/A/B/C DESCRIPTIONDC Current Gain -hFE = 30(Min)@ IC= 0.3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT41; 60V(Min)- BDT41A 80V(Min)- BDT41B; 100V(Min)- BDT41C Complement to Type BDT42/42A/42B/42C APPLICATIONS Designed for use in general purpose amplifer and sw

MOSTRAR MÁS

Otros transistores... BDT32AF , BDT32B , BDT32BF , BDT32C , BDT32CF , BDT32DF , BDT32F , BDT41 , 2SC2073 , BDT41AF , BDT41B , BDT41BF , BDT41C , BDT41CF , BDT41F , BDT42 , BDT42A .

History: ESM142

 

 
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