BDT41AF Todos los transistores

 ..1. Size:214K  inchange semiconductor
 bdt41f bdt41af bdt41bf bdt41cf.pdf

isc Silicon NPN Power Transistors BDT41F/AF/BF/CF DESCRIPTION DC Current Gain -h = 30(Min)@ I = 0.3A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min)- BDT41F; 60V(Min)- BDT41AF CEO(SUS) 80V(Min)- BDT41BF; 100V(Min)- BDT41CF Complement to Type BDT42F/AF/BF/CF Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed fo

 8.1. Size:214K  inchange semiconductor
 bdt41 bdt41a bdt41b bdt41c.pdf

isc Silicon NPN Power Transistors BDT41/A/B/C DESCRIPTION DC Current Gain -h = 30(Min)@ I = 0.3A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min)- BDT41; 60V(Min)- BDT41A CEO(SUS) 80V(Min)- BDT41B; 100V(Min)- BDT41C Complement to Type BDT42/42A/42B/42C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use

 9.1. Size:107K  inchange semiconductor
 bdt41f-af-bf-cf bdt41f af bf cf.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT41F/AF/BF/CF DESCRIPTION DC Current Gain -hFE = 30(Min)@ IC= 0.3A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 40V(Min)- BDT41F; 60V(Min)- BDT41AF 80V(Min)- BDT41BF; 100V(Min)- BDT41CF Complement to Type BDT42F/AF/BF/CF APPLICATIONS Designed for use in general purpose amplifer

 9.2. Size:158K  inchange semiconductor
 bdt41 a b c.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT41/A/B/C DESCRIPTION DC Current Gain -hFE = 30(Min)@ IC= 0.3A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 40V(Min)- BDT41; 60V(Min)- BDT41A 80V(Min)- BDT41B; 100V(Min)- BDT41C Complement to Type BDT42/42A/42B/42C APPLICATIONS Designed for use in general purpose amplifer and sw