BDT42 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT42
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 65 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar BDT42
BDT42 Datasheet (PDF)
bdt42 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT42/A/B/C DESCRIPTIONDC Current Gain -hFE = 30(Min)@ IC= -0.3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT42; -60V(Min)- BDT42A -80V(Min)- BDT42B; -100V(Min)- BDT42C Complement to Type BDT41/A/B/C APPLICATIONS Designed for use in general purpose amplifer and swi
bdt42 bdt42a bdt42b bdt42c.pdf
isc Silicon PNP Power Transistors BDT42/A/B/CDESCRIPTIONDC Current Gain -h = 30(Min)@ I = -0.3AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)- BDT42; -60V(Min)- BDT42ACEO(SUS)-80V(Min)- BDT42B; -100V(Min)- BDT42CComplement to Type BDT41/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use i
bdt42f-af-bf-cf bdt42f af bf cf.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT42F/AF/BF/CF DESCRIPTIONDC Current Gain -hFE = 30(Min)@ IC= -0.3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT42F; -60V(Min)- BDT42AF -80V(Min)- BDT42BF; -100V(Min)- BDT42CF Complement to Type BDT41F/AF/BF/CF APPLICATIONS Designed for use in general purpose ampl
bdt42f bdt42af bdt42bf bdt42cf.pdf
isc Silicon PNP Power Transistors BDT42F/AF/BF/CFDESCRIPTIONDC Current Gain -h = 30(Min)@ I = -0.3AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)- BDT42F; -60V(Min)- BDT42AFCEO(SUS)-80V(Min)- BDT42BF; -100V(Min)- BDT42CFComplement to Type BDT41F/AF/BF/CFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: TMPC1622D6
History: TMPC1622D6
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D