BDT42A
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT42A
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 65
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 100
V
Corriente del colector DC máxima (Ic): 6
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3
MHz
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar BDT42A
BDT42A
Datasheet (PDF)
..1. Size:217K inchange semiconductor
bdt42 bdt42a bdt42b bdt42c.pdf
isc Silicon PNP Power Transistors BDT42/A/B/CDESCRIPTIONDC Current Gain -h = 30(Min)@ I = -0.3AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)- BDT42; -60V(Min)- BDT42ACEO(SUS)-80V(Min)- BDT42B; -100V(Min)- BDT42CComplement to Type BDT41/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use i
0.1. Size:216K inchange semiconductor
bdt42f bdt42af bdt42bf bdt42cf.pdf
isc Silicon PNP Power Transistors BDT42F/AF/BF/CFDESCRIPTIONDC Current Gain -h = 30(Min)@ I = -0.3AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)- BDT42F; -60V(Min)- BDT42AFCEO(SUS)-80V(Min)- BDT42BF; -100V(Min)- BDT42CFComplement to Type BDT41F/AF/BF/CFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign
9.1. Size:157K inchange semiconductor
bdt42 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT42/A/B/C DESCRIPTIONDC Current Gain -hFE = 30(Min)@ IC= -0.3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT42; -60V(Min)- BDT42A -80V(Min)- BDT42B; -100V(Min)- BDT42C Complement to Type BDT41/A/B/C APPLICATIONS Designed for use in general purpose amplifer and swi
9.2. Size:106K inchange semiconductor
bdt42f-af-bf-cf bdt42f af bf cf.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT42F/AF/BF/CF DESCRIPTIONDC Current Gain -hFE = 30(Min)@ IC= -0.3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT42F; -60V(Min)- BDT42AF -80V(Min)- BDT42BF; -100V(Min)- BDT42CF Complement to Type BDT41F/AF/BF/CF APPLICATIONS Designed for use in general purpose ampl
Otros transistores... 2SA1771
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