BDT61
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT61
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 4
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1.5
MHz
Ganancia de corriente contínua (hfe): 750
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar BDT61
BDT61
Datasheet (PDF)
..1. Size:215K inchange semiconductor
bdt61 bdt61a bdt61b bdt61c.pdf 
isc Silicon NPN Darlington Power Transistors BDT61/A/B/CDESCRIPTIONDC Current Gain -h = 750(Min)@ I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)- BDT61; 80V(Min)- BDT61A;CEO(SUS)100V(Min)- BDT61B; 120V(Min)- BDT61CComplement to Type BDT60/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned
..2. Size:302K inchange semiconductor
bdt61 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistors BDT61/A/B/C DESCRIPTION DC Current Gain -hFE = 750(Min)@ IC= 1.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(Min)- BDT61B; 120V(Min)- BDT61C Complement to Type BDT60/A/B/C APPLICATIONS Designed for use in audio amplifier output
0.1. Size:213K inchange semiconductor
bdt61cf.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDT61CFDESCRIPTIONHigh DC Current GainLow Saturation VoltageComplement to Type BDT60CFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
0.2. Size:213K inchange semiconductor
bdt61f.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDT61FDESCRIPTIONHigh DC Current GainLow Saturation VoltageComplement to Type BDT60FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
0.3. Size:213K inchange semiconductor
bdt61bf.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDT61BFDESCRIPTIONHigh DC Current GainLow Saturation VoltageComplement to Type BDT60BFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
0.4. Size:213K inchange semiconductor
bdt61af.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDT61AFDESCRIPTIONHigh DC Current GainLow Saturation VoltageComplement to Type BDT60AFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
Otros transistores... 2N3192
, 2N3193
, 2N3194
, 2N3195
, 2N3196
, 2N3197
, 2N3198
, 2N3199
, BC327
, 2N320
, 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
.
