BDT61B Todos los transistores

 ..1. Size:215K  inchange semiconductor
 bdt61 bdt61a bdt61b bdt61c.pdf

isc Silicon NPN Darlington Power Transistors BDT61/A/B/C DESCRIPTION DC Current Gain -h = 750(Min)@ I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min)- BDT61; 80V(Min)- BDT61A; CEO(SUS) 100V(Min)- BDT61B; 120V(Min)- BDT61C Complement to Type BDT60/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

 0.1. Size:213K  inchange semiconductor
 bdt61bf.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDT61BF DESCRIPTION High DC Current Gain Low Saturation Voltage Complement to Type BDT60BF Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 9.1. Size:213K  inchange semiconductor
 bdt61cf.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDT61CF DESCRIPTION High DC Current Gain Low Saturation Voltage Complement to Type BDT60CF Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 9.2. Size:213K  inchange semiconductor
 bdt61f.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDT61F DESCRIPTION High DC Current Gain Low Saturation Voltage Complement to Type BDT60F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

 9.3. Size:302K  inchange semiconductor
 bdt61 a b c.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistors BDT61/A/B/C DESCRIPTION DC Current Gain -hFE = 750(Min)@ IC= 1.5A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(Min)- BDT61B; 120V(Min)- BDT61C Complement to Type BDT60/A/B/C APPLICATIONS Designed for use in audio amplifier output

 9.4. Size:213K  inchange semiconductor
 bdt61af.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDT61AF DESCRIPTION High DC Current Gain Low Saturation Voltage Complement to Type BDT60AF Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR