BDT61B Todos los transistores

 

BDT61B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BDT61B
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1.5 MHz
   Ganancia de corriente contínua (hfe): 750
   Paquete / Cubierta: TO220
 

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BDT61B Datasheet (PDF)

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bdt61 bdt61a bdt61b bdt61c.pdf pdf_icon

BDT61B

isc Silicon NPN Darlington Power Transistors BDT61/A/B/CDESCRIPTIONDC Current Gain -h = 750(Min)@ I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)- BDT61; 80V(Min)- BDT61A;CEO(SUS)100V(Min)- BDT61B; 120V(Min)- BDT61CComplement to Type BDT60/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned

 0.1. Size:213K  inchange semiconductor
bdt61bf.pdf pdf_icon

BDT61B

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDT61BFDESCRIPTIONHigh DC Current GainLow Saturation VoltageComplement to Type BDT60BFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 9.1. Size:213K  inchange semiconductor
bdt61cf.pdf pdf_icon

BDT61B

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDT61CFDESCRIPTIONHigh DC Current GainLow Saturation VoltageComplement to Type BDT60CFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 9.2. Size:213K  inchange semiconductor
bdt61f.pdf pdf_icon

BDT61B

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDT61FDESCRIPTIONHigh DC Current GainLow Saturation VoltageComplement to Type BDT60FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

Otros transistores... BDT60BF , BDT60C , BDT60CF , BDT60F , BDT60L , BDT61 , BDT61A , BDT61AF , 2SD669A , BDT61BF , BDT61C , BDT61CF , BDT61F , BDT61L , BDT62 , BDT62A , BDT62AF .

History: 2SC2814F4 | KT501L | AF280 | 2SD1571 | DTA023EM

 

 
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