BDT61BF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT61BF
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 17 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1.5 MHz
Ganancia de corriente contínua (hfe): 750
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de transistor bipolar BDT61BF
BDT61BF Datasheet (PDF)
bdt61bf.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDT61BFDESCRIPTIONHigh DC Current GainLow Saturation VoltageComplement to Type BDT60BFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
bdt61 bdt61a bdt61b bdt61c.pdf
isc Silicon NPN Darlington Power Transistors BDT61/A/B/CDESCRIPTIONDC Current Gain -h = 750(Min)@ I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)- BDT61; 80V(Min)- BDT61A;CEO(SUS)100V(Min)- BDT61B; 120V(Min)- BDT61CComplement to Type BDT60/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned
bdt61cf.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDT61CFDESCRIPTIONHigh DC Current GainLow Saturation VoltageComplement to Type BDT60CFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
bdt61f.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDT61FDESCRIPTIONHigh DC Current GainLow Saturation VoltageComplement to Type BDT60FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
bdt61 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistors BDT61/A/B/C DESCRIPTION DC Current Gain -hFE = 750(Min)@ IC= 1.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(Min)- BDT61B; 120V(Min)- BDT61C Complement to Type BDT60/A/B/C APPLICATIONS Designed for use in audio amplifier output
bdt61af.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDT61AFDESCRIPTIONHigh DC Current GainLow Saturation VoltageComplement to Type BDT60AFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
