BDT61C. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

BDT61C datasheet

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bdt61 bdt61a bdt61b bdt61c.pdf pdf_icon

isc Silicon NPN Darlington Power Transistors BDT61/A/B/C DESCRIPTION DC Current Gain -h = 750(Min)@ I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min)- BDT61; 80V(Min)- BDT61A; CEO(SUS) 100V(Min)- BDT61B; 120V(Min)- BDT61C Complement to Type BDT60/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

0.1. Size:213K inchange semiconductor
bdt61cf.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDT61CF DESCRIPTION High DC Current Gain Low Saturation Voltage Complement to Type BDT60CF Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

9.1. Size:213K inchange semiconductor
bdt61f.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDT61F DESCRIPTION High DC Current Gain Low Saturation Voltage Complement to Type BDT60F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

9.2. Size:302K inchange semiconductor
bdt61 a b c.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistors BDT61/A/B/C DESCRIPTION DC Current Gain -hFE = 750(Min)@ IC= 1.5A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(Min)- BDT61B; 120V(Min)- BDT61C Complement to Type BDT60/A/B/C APPLICATIONS Designed for use in audio amplifier output