BDT62BF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT62BF
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 17 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10 MHz
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de BDT62BF
BDT62BF Datasheet (PDF)
bdt62 bdt62a bdt62b bdt62c.pdf

isc Silicon PNP Darlington Power Transistors BDT62/A/B/CDESCRIPTIONDC Current Gain -h = 1000(Min)@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT62; -80V(Min)- BDT62A;CEO(SUS)-100V(Min)- BDT62B; -120V(Min)- BDT62CComplement to Type BDT63/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesig
bdt62 a b c.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistors BDT62/A/B/C DESCRIPTION DC Current Gain -hFE = 1000(Min)@ IC= -3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C Complement to Type BDT63/A/B/C APPLICATIONS Designed for use in audio amplifier ou
bdt62f.pdf

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistors BDT62FDESCRIPTIONDC Current Gain -h = 1000(Min)@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type BDT63FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio amplifier output stages , genera
Otros transistores... BDT61C , BDT61CF , BDT61F , BDT61L , BDT62 , BDT62A , BDT62AF , BDT62B , 2222A , BDT62C , BDT62CF , BDT62F , BDT63 , BDT63A , BDT63AF , BDT63B , BDT63BF .
History: 2SB1123R | NSS1C300ET4G
History: 2SB1123R | NSS1C300ET4G



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