BDT63BF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT63BF
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 17 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10 MHz
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de transistor bipolar BDT63BF
BDT63BF Datasheet (PDF)
bdt63f bdt63af bdt63bf bdt63cf.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Darlington Power Transistor BDT63F/A/B/CDESCRIPTIONCollector Current -I = 10ACHigh DC Current Gain-h = 1000(Min)@ I = 10AFE CComplement to Type BDT62F/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general purpose
bdt63 bdt63a bdt63b bdt63c.pdf
isc Silicon NPN Darlington Power Transistor BDT63/A/B/CDESCRIPTIONCollector Current -I = 10ACHigh DC Current Gain-h = 1000(Min)@ I = 3AFE CComplement to Type BDT62/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general purposeamplifier applicationsABSOLUTE MAXIMUM RATINGS(T
bdt63 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDT63/A/B/C DESCRIPTION Collector Current -IC= 10A High DC Current Gain-hFE= 1000(Min)@ IC= 3A Complement to Type BDT62/A/B/C APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNI
Otros transistores... BDT62BF , BDT62C , BDT62CF , BDT62F , BDT63 , BDT63A , BDT63AF , BDT63B , 8550 , BDT63C , BDT63CF , BDT63F , BDT63-TO63 , BDT64 , BDT64A , BDT64AF , BDT64B .
