BDT64C
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT64C
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125
W
Tensión colector-base (Vcb): 120
V
Tensión colector-emisor (Vce): 120
V
Corriente del colector DC máxima (Ic): 12
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20
MHz
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar BDT64C
BDT64C
Datasheet (PDF)
..1. Size:201K inchange semiconductor
bdt64 bdt64a bdt64b bdt64c.pdf
isc Silicon PNP Darlington Power Transistor BDT64/A/B/CDESCRIPTIONCollector Current -I = -12ACHigh DC Current Gain-h = 1000(Min)@ I = -5AFE CComplement to Type BDT65/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general purposeamplifier applicationsABSOLUTE MAXIMUM RATINGS(
0.1. Size:203K inchange semiconductor
bdt64f bdt64af bdt64bf bdt64cf.pdf
isc Silicon PNP Darlington Power Transistor BDT64F/AF/BF/CFDESCRIPTIONCollector Current -I = -12ACHigh DC Current Gain-h = 1000(Min)@ I = -5AFE CComplement to Type BDT65F/AF/BF/CFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general purposeamplifier applicationsABSOLUTE MAXIMUM
9.2. Size:167K inchange semiconductor
bdt64 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDT64/A/B/C DESCRIPTION Collector Current -IC= -12A High DC Current Gain-hFE= 1000(Min)@ IC= -5A Complement to Type BDT65/A/B/C APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE U
9.3. Size:159K inchange semiconductor
bdt64f af bf cf.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDT64F/AF/BF/CF DESCRIPTION Collector Current -IC= -12A High DC Current Gain-hFE= 1000(Min)@ IC= -5A Complement to Type BDT65F/AF/BF/CF APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.