BDT64F. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

BDT64F datasheet

..1. Size:203K inchange semiconductor
bdt64f bdt64af bdt64bf bdt64cf.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor BDT64F/AF/BF/CF DESCRIPTION Collector Current -I = -12A C High DC Current Gain-h = 1000(Min)@ I = -5A FE C Complement to Type BDT65F/AF/BF/CF Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM

..2. Size:159K inchange semiconductor
bdt64f af bf cf.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDT64F/AF/BF/CF DESCRIPTION Collector Current -IC= -12A High DC Current Gain-hFE= 1000(Min)@ IC= -5A Complement to Type BDT65F/AF/BF/CF APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER

9.1. Size:478K no
bdt64.pdf pdf_icon

9.2. Size:167K inchange semiconductor
bdt64 a b c.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDT64/A/B/C DESCRIPTION Collector Current -IC= -12A High DC Current Gain-hFE= 1000(Min)@ IC= -5A Complement to Type BDT65/A/B/C APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE U