BDT65C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT65C
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 120 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 10 MHz
Ganancia de corriente contínua (hFE): 2000
Encapsulados: TO220
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BDT65C datasheet
bdt65c.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDT65C DESCRIPTION With TO-220C package High DC Current Gain DARLINGTON Complement to type BDT64C APPLICATIONS For audio output stages and general purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absol
bdt65 bdt65a bdt65b bdt65c.pdf
isc Silicon NPN Darlington Power Transistor BDT65/A/B/C DESCRIPTION Collector Current -I = 12A C High DC Current Gain-h = 1000(Min)@ I = 5A FE C Complement to Type BDT64/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(T
bdt65f bdt65af bdt65bf bdt65cf.pdf
isc Silicon NPN Darlington Power Transistor BDT65F/AF/BF/CF DESCRIPTION Collector Current -I = 12A C High DC Current Gain-h = 1000(Min)@ I = 5A FE C Complement to Type BDT64F/AF/BF/CF Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RA
Otros transistores... BDT64C, BDT64CF, BDT64F, BDT65, BDT65A, BDT65AF, BDT65B, BDT65BF, 2SC5200, BDT65CF, BDT65F, BDT81, BDT81F, BDT82, BDT82F, BDT83, BDT83F
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