BDT84 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT84
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 10 MHz
Ganancia de corriente contínua (hFE): 50
Encapsulados: TO220
Búsqueda de reemplazo de BDT84
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BDT84 datasheet
bdt82 bdt84 bdt86 bdt88.pdf
isc Silicon PNP Power Transistors BDT82/84/86/88 DESCRIPTION DC Current Gain -h = 40(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min)- BDT82; -80V(Min)- BDT84; CEO(SUS) -100V(Min)- BDT86; -120V(Min)- BDT88 Complement to Type BDT81/83/85/87 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for us
bdt81-bdt82-bdt83-bdt84-bdt85-bdt86-bdt87-bdt88.pdf
PNP BDT82 BDT84 BDT86 BDT88 NPN BDT81 BDT83 BDT85 BDT87 SILICON POWER TRANSISTOR SILICON POWER TRANSISTOR The BDT82 BDT84 BDT86 BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. NPN complements are BDT81 BDT83 BDT85 BDT87.
bdt82f bdt84f bdt86f bdt88f.pdf
isc Silicon PNP Power Transistors BDT82F/84F/86F/88F DESCRIPTION DC Current Gain -h = 40(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min)- BDT82F; -80V(Min)- BDT84F; CEO(SUS) -100V(Min)- BDT86F; -120V(Min)- BDT88F Complement to Type BDT81F/83F/85F/87F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Des
Otros transistores... BDT65CF , BDT65F , BDT81 , BDT81F , BDT82 , BDT82F , BDT83 , BDT83F , 2N3055 , BDT84F , BDT85 , BDT85F , BDT86 , BDT86F , BDT87 , BDT87F , BDT88 .
History: BTD1766M3
History: BTD1766M3
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