BDT84F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT84F
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10 MHz
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de transistor bipolar BDT84F
BDT84F Datasheet (PDF)
bdt82f bdt84f bdt86f bdt88f.pdf
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isc Silicon PNP Power Transistors BDT82F/84F/86F/88FDESCRIPTIONDC Current Gain -h = 40(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT82F; -80V(Min)- BDT84F;CEO(SUS)-100V(Min)- BDT86F; -120V(Min)- BDT88FComplement to Type BDT81F/83F/85F/87FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDes
bdt81-bdt82-bdt83-bdt84-bdt85-bdt86-bdt87-bdt88.pdf
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PNP BDT82 BDT84 BDT86 BDT88NPN BDT81 BDT83 BDT85 BDT87SILICON POWER TRANSISTORSILICON POWER TRANSISTORThe BDT82 BDT84 BDT86 BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope.They are intended for use in audio output stages and general amplifier and switching appications.NPN complements are BDT81 BDT83 BDT85 BDT87.
bdt82 bdt84 bdt86 bdt88.pdf
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isc Silicon PNP Power Transistors BDT82/84/86/88DESCRIPTIONDC Current Gain -h = 40(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT82; -80V(Min)- BDT84;CEO(SUS)-100V(Min)- BDT86; -120V(Min)- BDT88Complement to Type BDT81/83/85/87Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for us
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .