BDT85F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT85F
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 21 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10 MHz
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de transistor bipolar BDT85F
BDT85F Datasheet (PDF)
bdt81f bdt83f bdt85f bdt87f.pdf
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isc Silicon NPN Power Transistors BDT81F/83F/85F/87FDESCRIPTIONDC Current Gain -h = 40(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)- BDT81F; 80V(Min)- BDT83F;CEO(SUS)100V(Min)- BDT85F; 120V(Min)- BDT87FComplement to Type BDT82F/84F/86F/88FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned
bdt81-bdt82-bdt83-bdt84-bdt85-bdt86-bdt87-bdt88.pdf
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PNP BDT82 BDT84 BDT86 BDT88NPN BDT81 BDT83 BDT85 BDT87SILICON POWER TRANSISTORSILICON POWER TRANSISTORThe BDT82 BDT84 BDT86 BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope.They are intended for use in audio output stages and general amplifier and switching appications.NPN complements are BDT81 BDT83 BDT85 BDT87.
bdt81 bdt83 bdt85 bdt87.pdf
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isc Silicon NPN Power Transistors BDT81/83/85/87DESCRIPTIONDC Current Gain -h = 40(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)- BDT81; 80V(Min)- BDT83;CEO(SUS)100V(Min)- BDT85; 120V(Min)- BDT87Complement to Type BDT82/84/86/88Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .