BDT93F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BDT93F

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO220F

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BDT93F datasheet

 ..1. Size:215K  inchange semiconductor
 bdt91f bdt93f bdt95f.pdf pdf_icon

BDT93F

isc Silicon NPN Power Transistor BDT91F/93F/95F DESCRIPTION DC Current Gain- h = 20 200@ I = 4A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min)- BDT91F; 80V(Min)- BDT93F; CEO(SUS) 100V(Min)- BDT95F Complement to Type BDT92F/94F/96F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output stag

 9.1. Size:214K  inchange semiconductor
 bdt91 bdt93 bdt95.pdf pdf_icon

BDT93F

isc Silicon NPN Power Transistor BDT91/93/95 DESCRIPTION DC Current Gain- h = 20 200@ I = 4A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min)- BDT91; 80V(Min)- BDT93; CEO(SUS) 100V(Min)- BDT95 Complement to Type BDT92/94/96 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output stages and ge

Otros transistores... BDT87F, BDT88, BDT88F, BDT91, BDT91F, BDT92, BDT92F, BDT93, 13009, BDT94, BDT94F, BDT95, BDT95F, BDT96, BDT96F, BDV10, BDV11