BDV64C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDV64C
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta: TO218
Búsqueda de reemplazo de transistor bipolar BDV64C
BDV64C Datasheet (PDF)
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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDV64/A/B/C DESCRIPTION Collector Current -IC= -12A Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -5A Complement to Type BDV65/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T
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Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDV64/64A/64B/64C DESCRIPTION With TO-3PN package Complement to type BDV65/65A/65B/65C DARLINGTON High DC current gain APPLICATIONS For use in general purpose amplifier applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .