BDW23 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Darlington Power Transistor BDW23/A/B/CDESCRIPTIONCollector Current -I = 6ACHigh DC Current Gain-h = 750(Min)@ I = 2AFE CComplement to Type BDW24/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for hammer drivers, audio amplifiers applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDW23/A/B/C DESCRIPTION Collector Current -IC= 6A High DC Current Gain-hFE= 750(Min)@ IC= 2A Complement to Type BDW24/A/B/C APPLICATIONS Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITBDW23 45BDW23A 6

BDW23/A/B/CHammer Drivers, Audio Amplifiers Applications Power Darlington TR Complement to BDW24, BDW24A, BDW24B and BDW24C respectivelyTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BDW23 45 V: BDW23A 60 V: BDW23B 80 V: BDW23C

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDW23/A/B/C DESCRIPTION Collector Current -IC= 6A High DC Current Gain-hFE= 750(Min)@ IC= 2A Complement to Type BDW24/A/B/C APPLICATIONS Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITBDW23 45BDW23A 6