BDW23A Todos los transistores

 ..1. Size:38K  fairchild semi
 bdw23a.pdf

BDW23/A/B/C Hammer Drivers, Audio Amplifiers Applications Power Darlington TR Complement to BDW24, BDW24A, BDW24B and BDW24C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BDW23 45 V BDW23A 60 V BDW23B 80 V BDW23C

 ..2. Size:214K  inchange semiconductor
 bdw23 bdw23a bdw23b bdw23c.pdf

isc Silicon NPN Darlington Power Transistor BDW23/A/B/C DESCRIPTION Collector Current -I = 6A C High DC Current Gain-h = 750(Min)@ I = 2A FE C Complement to Type BDW24/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

 0.1. Size:116K  inchange semiconductor
 bdw23-a-b-c bdw23a-b-c.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDW23/A/B/C DESCRIPTION Collector Current -IC= 6A High DC Current Gain-hFE= 750(Min)@ IC= 2A Complement to Type BDW24/A/B/C APPLICATIONS Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT BDW23 45 BDW23A 6

 9.1. Size:169K  inchange semiconductor
 bdw23 a b c.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDW23/A/B/C DESCRIPTION Collector Current -IC= 6A High DC Current Gain-hFE= 750(Min)@ IC= 2A Complement to Type BDW24/A/B/C APPLICATIONS Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT BDW23 45 BDW23A 6