BDW24 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon PNP Darlington Power Transistor BDW24/A/B/CDESCRIPTIONCollector Current -I = -6ACHigh DC Current Gain-h = 750(Min)@ I = -2AFE CComplement to Type BDW23/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for hammer drivers, audio amplifiers applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDW24/A/B/C DESCRIPTION Collector Current -IC= -6A High DC Current Gain-hFE= 750(Min)@ IC= -2A Complement to Type BDW23/A/B/C APPLICATIONS Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITBDW24 -45BDW24

BDW24/A/B/CHammer Drivers, Audio Amplifiers Applications Power Darlington TR Complement to BDW23, BDW23A, BDW23B and BDW23C respectivelyTO-22011.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BDW24 - 45 V: BDW24A - 60 V: BDW24B - 80 V:

BDW24, BDW24A, BDW24B, BDW24CPNP SILICON POWER DARLINGTONS Designed for Complementary Use with BDW23, BDW23A, BDW23B and BDW23CTO-220 PACKAGE(TOP VIEW) 50 W at 25C Case Temperature 6 A Continuous Collector CurrentB 1 Minimum hFE of 750 at 2 A, 3 VC 2E 3Pin 2 is in electrical contact with the mounting base.MDTRACAabsolute maximum ratings at 25C case te