BDW52A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDW52A
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 117 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar BDW52A
BDW52A Datasheet (PDF)
bdw52a.pdf
BDW52ADimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
bdw52 bdw52a bdw52b bdw52c.pdf
isc Silicon PNP Power Transistor BDW52/A/B/CDESCRIPTIONCollector Current -I = -15ACCollector-Emitter Sustaining Voltage-: V = -45V(Min)- BDW52; -60V(Min)- BDW52ACEO(SUS)-80V(Min)- BDW52B; -100V(Min)- BDW52CComplement to Type BDW51/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power linear a
bdw51 bdw52.pdf
BDW51CBDW52CSILICON NPN SWITCHING TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH DC CURRENT GAIN APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT 2DESCRIPTION The BDW51C is a silicon epitaxial-base NPNTO-3transistor in Jedec TO-3 metal case. It is intendedfor use in power
bdw52b.pdf
BDW52BDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
bdw52 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BDW52/A/B/C DESCRIPTION Collector Current -IC= -15A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDW52; -60V(Min)- BDW52A -80V(Min)- BDW52B; -100V(Min)- BDW52C Complement to Type BDW51/A/B/C APPLICATIONS Designed for use in power linear and switching applications. ABS
bdw52c.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDW52C DESCRIPTION With TO-3 package Complement to type BDW51C Excellent safe operating area APPLICATIONS For use in power linear and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum rating
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
