BDW54A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BDW54A
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 1 MHz
   Ganancia de corriente contínua (hfe): 750
   Paquete / Cubierta: TO220

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BDW54A Datasheet (PDF)

9.1. Size:94K st
bdx53 bdw54.pdf

BDX53A/53B/53CBDX54B/54CCOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS BDX53B, BDX53C, BDX54B AND BDX54CARE SGS-THOMSON PREFERREDSALESTYPESAPPLICATIONS AUDIO AMPLIFIERS LINEAR AND SWITCHING INDUSTRIAL32EQUIPMENT1TO-220DESCRIPTIONThe BDX53A, BDX53B and BDX53C are siliconepitaxial-base NPN power transistors inmonolithic Darlington configuration and aremoun

9.2. Size:43K st
bdx53d bdw54.pdf

BDX53BFIBDX54BFICOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS COMPLEMENTARY PNP - NPN DEVICESAPPLICATIONS: GENERAL PURPOSE SWITCHING ANDAMPLIFIER LINEAR AND SWITCHING INDUSTRIALEQUIPMENTDESCRIPTION3The BDX53BFI is silicon epitaxial-base NPN 21power transistor in monolithic Darlingtonconfiguration and are mounted in ISOWATT220ISOWATT220plastic package. It is

9.3. Size:202K inchange semiconductor
bdw54.pdf

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor BDW54DESCRIPTIONHigh DC Current Gain: h = 750(Min.)@ I = -1.5A, V = -3VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = -45V(Min)(BR)CEOLow Collector Saturation VoltageComplement to Type BDW53Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSD

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: CJF6668

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D