BDW83C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BDW83C

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1 MHz

Ganancia de corriente contínua (hFE): 750

Encapsulados: TO218

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BDW83C datasheet

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 bdw83c.pdf pdf_icon

BDW83C

isc Silicon NPN Darlington Power Transistor BDW83C DESCRIPTION Collector Current -I = 15A C High DC Current Gain-h = 750(Min)@ I = 6A FE C Complement to Type BDW84C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 ..2. Size:222K  inchange semiconductor
 bdw83 bdw83a bdw83b bdw83c.pdf pdf_icon

BDW83C

isc Silicon NPN Darlington Power Transistor BDW83/A/B/C DESCRIPTION Collector Current -I = 15A C High DC Current Gain-h = 750(Min)@ I = 6A FE C Complement to Type BDW84/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(T =

 9.1. Size:67K  st
 bdw83 bdw84.pdf pdf_icon

BDW83C

BDW83C BDW84C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS BDW83C IS A SGS-THOMSON PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH DC CURRENT GAIN APPLICATIONS 3 LINEAR AND SWITCHING INDUSTRIAL 2 EQUIPMENT 1 DESCRIPTION TO-218 The BDW83C is a silicon epitaxial-base NPN power monolithic Darlington transis

 9.2. Size:220K  inchange semiconductor
 bdw83d.pdf pdf_icon

BDW83C

isc Silicon NPN Darlington Power Transistor BDW83D DESCRIPTION Collector Current -I = 15A C High DC Current Gain-h = 750(Min)@ I = 6A FE C Complement to Type BDW84D Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

MOSTRAR MÁS

Otros transistores... BDW74, BDW74A, BDW74B, BDW74C, BDW74D, BDW83, BDW83A, BDW83B, 2SB817, BDW83D, BDW84, BDW84A, BDW84B, BDW84C, BDW84D, BDW91, BDW92