BDW84B. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

BDW84B datasheet

..1. Size:222K inchange semiconductor
bdw84 bdw84a bdw84b bdw84c.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor BDW84/A/B/C DESCRIPTION Collector Current -I = -15A C High DC Current Gain-h = 750(Min)@ I = -6A FE C Complement to Type BDW83/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(T

9.1. Size:67K st
bdw83 bdw84.pdf pdf_icon

BDW83C BDW84C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS BDW83C IS A SGS-THOMSON PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH DC CURRENT GAIN APPLICATIONS 3 LINEAR AND SWITCHING INDUSTRIAL 2 EQUIPMENT 1 DESCRIPTION TO-218 The BDW83C is a silicon epitaxial-base NPN power monolithic Darlington transis

9.2. Size:218K inchange semiconductor
bdw84d.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor BDW84D DESCRIPTION Collector Current -I = -15A C High DC Current Gain-h = 750(Min)@ I = -6A FE C Complement to Type BDW83D Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

9.3. Size:123K inchange semiconductor
bdw84 84a 84b 84c 84d.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDW84/84A/84B/84C/84D DESCRIPTION With TO-3PN package Complement to type BDW83/83A/83B/83C/83D DARLINGTON High DC current gain APPLICATIONS For use in power linear and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified ou