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BDW93 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BDW93
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-base (Vcb): 45 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 12 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 20 MHz
   Ganancia de corriente contínua (hfe): 15000
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar BDW93

 

BDW93 Datasheet (PDF)

 ..1. Size:43K  st
bdw93 bdw94.pdf

BDW93
BDW93

BDW93CFIBDW94CFICOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES MONOLITHIC DARLINGTONCONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATIONS LINEAR AND SWITCHING INDUSTRIAL32EQUIPMENT1DESCRIPTIONISOWATT220The BDW93CFI, is a silicon epitaxial-base NPNtransistor in monolithic

 ..2. Size:37K  st
bdw93.pdf

BDW93
BDW93

BDW93CFPBDW94CFPCOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES MONOLITHIC DARLINGTONCONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT)32APPLICATIONS1 LINEAR AND SWITCHING INDUSTRIALEQUIPMENTT0-220FPDESCRIPTIONThe

 ..3. Size:216K  inchange semiconductor
bdw93 bdw93a bdw93b bdw93c.pdf

BDW93
BDW93

isc Silicon NPN Power Transistor BDW93/A/B/CDESCRIPTIONCollector Current -I = 12ACCollector-Emitter Sustaining Voltage-: V = 45V(Min)- BDW93; 60V(Min)- BDW93ACEO(SUS)80V(Min)- BDW93B; 100V(Min)- BDW93CComplement to Type BDW94/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for hammer drivers, audio ampl

 ..4. Size:248K  inchange semiconductor
bdw93 a b c.pdf

BDW93
BDW93

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDW93/A/B/C DESCRIPTION Collector Current -IC= 12A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDW93; 60V(Min)- BDW93A 80V(Min)- BDW93B; 100V(Min)- BDW93C Complement to Type BDW94/A/B/C APPLICATIONS Designed for hammer drivers, audio amplifier applications. ABSOLUTE M

 0.1. Size:91K  st
bdw93cfp bdw94cfp.pdf

BDW93
BDW93

BDW93CFPBDW94CFPCOMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES MONOLITHIC DARLINGTONCONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE FULLY MOLDED INSULATED PACKAGE 2000 V DC INSULATION (U.L. COMPLIANT)321APPLICATIONS LINEAR AND SWITCHING INDUSTRIALT0-220FPEQUIPMENT

 0.2. Size:93K  st
bdw93-bdw94.pdf

BDW93
BDW93

BDW93B/BDW93CBDW94B/BDW94CCOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENT32DESCRIPTION1The BDW93B, and BDW93C are siliconepitaxial-base NPN power transistors inTO-220monolithic Darlington config

 0.3. Size:39K  fairchild semi
bdw93a.pdf

BDW93
BDW93

BDW93/A/B/CHammer Drivers, Audio Amplifiers Applications Power Darlington TR Complement to BDW94, BDW94A, BDW94B and BDW94C respectivelyTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BDW93 45 V: BDW93A 60 V: BDW93B 80 V: BDW93C

 0.4. Size:41K  fairchild semi
bdw93cf.pdf

BDW93
BDW93

BDW93CFHammer Drivers, Audio Amplifiers Applications Power Darlington TR Complement to BDW94CF respectivelyTO-220F11.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V IC Collector Current (DC) 12 A I

 0.5. Size:661K  jilin sino
bdw93c bdw94c.pdf

BDW93
BDW93

DARLINGTON COMPLEMENTARY POWER TRANSISTORS RBDW93C/BDW94C APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform ly power amplifier circuit FEATURES

 0.6. Size:140K  shantou-huashan
hbdw93c.pdf

BDW93
BDW93

NPN DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW93C APPLICATIONS Power Linear And Switching Applicatione. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector DissipationTc=25

 0.7. Size:191K  inchange semiconductor
bdw93cfp.pdf

BDW93
BDW93

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDW93CFPDESCRIPTIONWith TO-220F packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to Type BDW94CFPMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElec

 0.8. Size:191K  inchange semiconductor
bdw93c.pdf

BDW93
BDW93

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDW93CDESCRIPTIONWith TO-220 packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to Type BDW94CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectroni

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