BDW93B
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDW93B
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 12
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20
MHz
Ganancia de corriente contínua (hfe): 15000
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar BDW93B
BDW93B
Datasheet (PDF)
..1. Size:216K inchange semiconductor
bdw93 bdw93a bdw93b bdw93c.pdf
isc Silicon NPN Power Transistor BDW93/A/B/CDESCRIPTIONCollector Current -I = 12ACCollector-Emitter Sustaining Voltage-: V = 45V(Min)- BDW93; 60V(Min)- BDW93ACEO(SUS)80V(Min)- BDW93B; 100V(Min)- BDW93CComplement to Type BDW94/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for hammer drivers, audio ampl
9.1. Size:43K st
bdw93 bdw94.pdf
BDW93CFIBDW94CFICOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES MONOLITHIC DARLINGTONCONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATIONS LINEAR AND SWITCHING INDUSTRIAL32EQUIPMENT1DESCRIPTIONISOWATT220The BDW93CFI, is a silicon epitaxial-base NPNtransistor in monolithic
9.2. Size:37K st
bdw93.pdf
BDW93CFPBDW94CFPCOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES MONOLITHIC DARLINGTONCONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT)32APPLICATIONS1 LINEAR AND SWITCHING INDUSTRIALEQUIPMENTT0-220FPDESCRIPTIONThe
9.3. Size:91K st
bdw93cfp bdw94cfp.pdf
BDW93CFPBDW94CFPCOMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES MONOLITHIC DARLINGTONCONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE FULLY MOLDED INSULATED PACKAGE 2000 V DC INSULATION (U.L. COMPLIANT)321APPLICATIONS LINEAR AND SWITCHING INDUSTRIALT0-220FPEQUIPMENT
9.4. Size:93K st
bdw93-bdw94.pdf
BDW93B/BDW93CBDW94B/BDW94CCOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENT32DESCRIPTION1The BDW93B, and BDW93C are siliconepitaxial-base NPN power transistors inTO-220monolithic Darlington config
9.5. Size:39K fairchild semi
bdw93a.pdf
BDW93/A/B/CHammer Drivers, Audio Amplifiers Applications Power Darlington TR Complement to BDW94, BDW94A, BDW94B and BDW94C respectivelyTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BDW93 45 V: BDW93A 60 V: BDW93B 80 V: BDW93C
9.6. Size:41K fairchild semi
bdw93cf.pdf
BDW93CFHammer Drivers, Audio Amplifiers Applications Power Darlington TR Complement to BDW94CF respectivelyTO-220F11.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V IC Collector Current (DC) 12 A I
9.7. Size:661K jilin sino
bdw93c bdw94c.pdf
DARLINGTON COMPLEMENTARY POWER TRANSISTORS RBDW93C/BDW94C APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform ly power amplifier circuit FEATURES
9.8. Size:140K shantou-huashan
hbdw93c.pdf
NPN DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW93C APPLICATIONS Power Linear And Switching Applicatione. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector DissipationTc=25
9.9. Size:248K inchange semiconductor
bdw93 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDW93/A/B/C DESCRIPTION Collector Current -IC= 12A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDW93; 60V(Min)- BDW93A 80V(Min)- BDW93B; 100V(Min)- BDW93C Complement to Type BDW94/A/B/C APPLICATIONS Designed for hammer drivers, audio amplifier applications. ABSOLUTE M
9.10. Size:191K inchange semiconductor
bdw93cfp.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDW93CFPDESCRIPTIONWith TO-220F packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to Type BDW94CFPMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElec
9.11. Size:191K inchange semiconductor
bdw93c.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDW93CDESCRIPTIONWith TO-220 packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to Type BDW94CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectroni
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