BDW94B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDW94B
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20 MHz
Ganancia de corriente contínua (hfe): 15000
Paquete / Cubierta: TO220
- Selección de transistores por parámetros
BDW94B Datasheet (PDF)
bdw94 bdw94a bdw94b bdw94c.pdf

INCHANGE Semiconductorisc Silicon PNP Power Transistor BDW94/A/B/CDESCRIPTIONCollector Current -I = -12ACCollector-Emitter Sustaining Voltage-: V = -45V(Min)- BDW94; -60V(Min)- BDW94ACEO(SUS)-80V(Min)- BDW94B; -100V(Min)- BDW94CComplement to Type BDW93/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned f
bdw93 bdw94.pdf

BDW93CFIBDW94CFICOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES MONOLITHIC DARLINGTONCONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATIONS LINEAR AND SWITCHING INDUSTRIAL32EQUIPMENT1DESCRIPTIONISOWATT220The BDW93CFI, is a silicon epitaxial-base NPNtransistor in monolithic
bdw93cfp bdw94cfp.pdf

BDW93CFPBDW94CFPCOMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES MONOLITHIC DARLINGTONCONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE FULLY MOLDED INSULATED PACKAGE 2000 V DC INSULATION (U.L. COMPLIANT)321APPLICATIONS LINEAR AND SWITCHING INDUSTRIALT0-220FPEQUIPMENT
bdw93-bdw94.pdf

BDW93B/BDW93CBDW94B/BDW94CCOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENT32DESCRIPTION1The BDW93B, and BDW93C are siliconepitaxial-base NPN power transistors inTO-220monolithic Darlington config
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: PN2222ATA | KT201D | LDTB113EET1G | 2N3509CSM | BUL54BFI | 2N926 | DTA114YET1G
History: PN2222ATA | KT201D | LDTB113EET1G | 2N3509CSM | BUL54BFI | 2N926 | DTA114YET1G



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sc1318 | 2n3055 transistor equivalent | 2sc1740 | c3229 | c2078 transistor | 2sc458 transistors | 2sa992 | 2sa970