BDX18 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDX18
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 117 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 4 MHz
Ganancia de corriente contínua (hFE): 60
Encapsulados: TO3
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BDX18 datasheet
bdx18.pdf
isc Silicon PNP Power Transistors BDX18 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h =20-70@I = -4A FE C Collector-Emitter Saturation Voltage- V )= -1.1V(Max)@ I = -4A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIM
bdx18-n.pdf
BDX18 BDX18N PNP SILICON TRANSISTOR EPITAXIAL BASE LF Large Signal Power Amplification High Current Switching Suitable for Series and shunt regulators High Fidelity Amplifiers Power-switching circuits ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDX18 VCEO Collector-Emitter Voltage -60 V BDX18N -70 BDX18 VCER Collector-Emitter Voltage RBE=100 V BDX18N -65 BDX18
bdx18a.pdf
BDX18A Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 70V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
Otros transistores... BDX13 , BDX13-4 , BDX13-5 , BDX13-6 , BDX13-7 , BDX14 , BDX15 , BDX16 , 2N3904 , BDX18N , BDX20 , BDX22 , BDX22-4 , BDX22-5 , BDX22-6 , BDX22-7 , BDX23 .
History: HJ3669
History: HJ3669
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