BDX65L . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDX65L
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 117 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 16 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar BDX65L
BDX65L Datasheet (PDF)
bdx65-a-b-c.pdf
BDX 65, A, B, CNPN SILICON DARLINGTONSGeneral purpose darlingtons designed for power amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDX65 60BDX65A 80VCEO Collector-Emitter Voltage VBDX65B 100BDX65C 120BDX65 80BDX65A 100VCEV Collector-EmitterVoltage VBE=-1.5 V VBDX65B 120BDX65C 120BDX65BDX65AVEBO Emitter-Base Voltage 5.0 V
bdx65.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX65 DESCRIPTION With TO-3 package DARLINGTON Complement to type BDX64 APPLICATIONS Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25
bdx65 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX65/A/B/C DESCRIPTION Collector Current -IC= 12A High DC Current Gain-hFE= 1000(Min)@ IC= 5A Complement to Type BDX64/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VA
bdx65a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX65A DESCRIPTION With TO-3 package DARLINGTON Complement to type BDX64A APPLICATIONS Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25
bdx65 bdx65a bdx65b bdx65c.pdf
isc Silicon NPN Darlington Power Transistor BDX65/A/B/CDESCRIPTIONCollector Current -I = 12ACHigh DC Current Gain-h = 1000(Min)@ I = 5AFE CComplement to Type BDX64/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM RATI
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
