BDX66 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDX66
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 20 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta: TO3
Búsqueda de reemplazo de BDX66
BDX66 Datasheet (PDF)
bdx66.pdf

BDX 66, A, B, C PNP SILICON DARLINGTONSHigh current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitBDX66 60 BDX66A 80 -VCEO Collector-Emitter Voltage V BDX66B 100 BDX66C 120 BDX66 60 BDX66A 80 -VCBO Collector-Base Voltage V BDX66B 100 BDX66C 120 BDX66 BDX66A -VEBO Emitter-Base V
bdx66 bdx66a bdx66b bdx66c.pdf

isc Silicon PNP Darlington Power Transistor BDX66/A/B/CDESCRIPTIONCollector Current -I = -16ACHigh DC Current Gain-h = 1000(Min)@ I = -10AFE CComplement to Type BDX67/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM R
bdx66 a b c.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX66/A/B/C DESCRIPTION Collector Current -IC= -16A High DC Current Gain-hFE= 1000(Min)@ IC= -10A Complement to Type BDX67/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER
bdx66.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX66 DESCRIPTION With TO-3 package High current DARLINGTON APPLICATIONS Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL P
Otros transistores... BDX64B , BDX64C , BDX64L , BDX65 , BDX65A , BDX65B , BDX65C , BDX65L , MJE340 , BDX66A , BDX66B , BDX66C , BDX66L , BDX67 , BDX67A , BDX67B , BDX67C .
History: TBC850 | CTN391 | 2SC3207 | DDTA144VE
History: TBC850 | CTN391 | 2SC3207 | DDTA144VE



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