BDX66 Todos los transistores

 

BDX66 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BDX66
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 150 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 20 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 2000
   Paquete / Cubierta: TO3
 

 Búsqueda de reemplazo de BDX66

   - Selección ⓘ de transistores por parámetros

 

BDX66 Datasheet (PDF)

 ..1. Size:146K  comset
bdx66.pdf pdf_icon

BDX66

BDX 66, A, B, C PNP SILICON DARLINGTONSHigh current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitBDX66 60 BDX66A 80 -VCEO Collector-Emitter Voltage V BDX66B 100 BDX66C 120 BDX66 60 BDX66A 80 -VCBO Collector-Base Voltage V BDX66B 100 BDX66C 120 BDX66 BDX66A -VEBO Emitter-Base V

 ..2. Size:213K  inchange semiconductor
bdx66 bdx66a bdx66b bdx66c.pdf pdf_icon

BDX66

isc Silicon PNP Darlington Power Transistor BDX66/A/B/CDESCRIPTIONCollector Current -I = -16ACHigh DC Current Gain-h = 1000(Min)@ I = -10AFE CComplement to Type BDX67/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM R

 ..3. Size:139K  inchange semiconductor
bdx66 a b c.pdf pdf_icon

BDX66

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX66/A/B/C DESCRIPTION Collector Current -IC= -16A High DC Current Gain-hFE= 1000(Min)@ IC= -10A Complement to Type BDX67/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER

 ..4. Size:116K  inchange semiconductor
bdx66.pdf pdf_icon

BDX66

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX66 DESCRIPTION With TO-3 package High current DARLINGTON APPLICATIONS Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL P

Otros transistores... BDX64B , BDX64C , BDX64L , BDX65 , BDX65A , BDX65B , BDX65C , BDX65L , MJE340 , BDX66A , BDX66B , BDX66C , BDX66L , BDX67 , BDX67A , BDX67B , BDX67C .

History: TBC850 | CTN391 | 2SC3207 | DDTA144VE

 

 
Back to Top

 


 
.