BDX66C Todos los transistores

 ..1. Size:116K  inchange semiconductor
 bdx66c.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX66C DESCRIPTION With TO-3 package DARLINGTON High current APPLICATIONS Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL

 ..2. Size:213K  inchange semiconductor
 bdx66 bdx66a bdx66b bdx66c.pdf

isc Silicon PNP Darlington Power Transistor BDX66/A/B/C DESCRIPTION Collector Current -I = -16A C High DC Current Gain-h = 1000(Min)@ I = -10A FE C Complement to Type BDX67/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM R

 9.1. Size:164K  comset
 bdx66-a-b-c.pdf

BDX 66, A, B, C PNP SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDX66 -60 BDX66A -80 VCEO Collector-Emitter Voltage V BDX66B -100 BDX66C -120 BDX66 -60 BDX66A -80 VCBO Collector-Base Voltage V BDX66B -100 BDX66C -120 BDX66 BDX66A VEBO Emitter-Base Voltage -

 9.2. Size:146K  comset
 bdx66.pdf

BDX 66, A, B, C PNP SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDX66 60 BDX66A 80 -VCEO Collector-Emitter Voltage V BDX66B 100 BDX66C 120 BDX66 60 BDX66A 80 -VCBO Collector-Base Voltage V BDX66B 100 BDX66C 120 BDX66 BDX66A -VEBO Emitter-Base V

 9.3. Size:139K  inchange semiconductor
 bdx66 a b c.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX66/A/B/C DESCRIPTION Collector Current -IC= -16A High DC Current Gain-hFE= 1000(Min)@ IC= -10A Complement to Type BDX67/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER

 9.4. Size:116K  inchange semiconductor
 bdx66.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX66 DESCRIPTION With TO-3 package High current DARLINGTON APPLICATIONS Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL P