BDX67L . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDX67L
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 20 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar BDX67L
BDX67L Datasheet (PDF)
bdx67.pdf
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BDX67, A, B, C NPN SILICON DARLINGTONS NPN SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitBDX67 60 BDX67A 80 VCEO Collector-Emitter Voltage V BDX67B 100 BDX67C 120 BDX67 80 BDX67A 100 VCBO Collector-Base Voltage V BDX67B 120 BDX67C 140 BDX67 BDX6
bdx67-a-b-c.pdf
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BDX67BDX67ABDX67BBDX67CMECHANICAL DATANPN EPITAXIAL BASEDimensions in mmDARLINGTON POWERTRANSISTOR26.6 max. 9.0 max.4. 22. 5NPN epitaxial base transistors inmonolithic Darlington circuit foraudio output stages and generalB Eamplifier and switchingapplications.PNP complements are:10.912.8BDX66, BDX66A, BDX66B, BDX66C.TO3 Package.Case connected to col
bdx67cecc.pdf
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BDX67CECCDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 16A 12.70 (0.50) All Semelab hermetically sealed products can be processed i
bdx67.pdf
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX67 DESCRIPTION With TO-3 package High current capability DARLINGTON APPLICATIONS Designed for power amplification and switching application. PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25)
bdx67c.pdf
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX67C DESCRIPTION With TO-3 package High current capability DARLINGTON APPLICATIONS Designed for power amplification and switching application. PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25)
bdx67 a b c.pdf
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX67/A/B/C DESCRIPTION High DC Current Gain- : hFE= 1000(Min)@ IC= 10A Low Saturation Voltage Complement to Type BDX66/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER
bdx67b.pdf
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX67B DESCRIPTION With TO-3 package High current capability DARLINGTON APPLICATIONS Designed for power amplification and switching application. PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25)
bdx67 bdx67a bdx67b bdx67c.pdf
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isc Silicon NPN Darlington Power Transistor BDX67/A/B/CDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 10AFE CLow Saturation VoltageComplement to Type BDX66/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM RATING
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .