BDX88 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDX88
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 117 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 35 MHz
Ganancia de corriente contínua (hfe): 750
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar BDX88
BDX88 Datasheet (PDF)
bdx88 bdx88a bdx88b bdx88c.pdf
isc Silicon PNP Darlington Power Transistor BDX88/A/B/CDESCRIPTIONHigh DC Current Gain-: h = 750(Min)@ I = -6AFE CCollector-Emitter Sustaining Voltage-: V = -45V(Min)- BDX88; -60V(Min)- BDX88ACEO(SUS)-80V(Min)- BDX88B; -100V(Min)- BDX88CComplement to Type BDX87/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSD
bdx88 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX88/A/B/C DESCRIPTION High DC Current Gain- : hFE= 750(Min)@ IC= -6A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDX88; -60V(Min)- BDX88A -80V(Min)- BDX88B; -100V(Min)- BDX88C Complement to Type BDX87/A/B/C APPLICATIONS Designed for use in power linear
bdx88c.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX88C DESCRIPTION With TO-3 package Complement to type BDX87C DARLINGTON APPLICATIONS Designed for use in power linear and switching application. PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=25
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: BDW84C
History: BDW84C
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D