BDY25B Todos los transistores

 

BDY25B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BDY25B
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 87 W
   Tensión colector-base (Vcb): 200 V
   Tensión colector-emisor (Vce): 140 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 10 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO3
 

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BDY25B Datasheet (PDF)

 ..1. Size:207K  inchange semiconductor
 bdy25b.pdf pdf_icon

BDY25B

isc Silicon NPN Power Transistor BDY25BDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V )= 0.6V(Max)@ I = 2ACE(sat CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for LF signal powe amplifier applications.ABSOLUTE MAXIMUM RA

 9.1. Size:244K  comset
 bdy23-bdy24-bdy25-180t2-181t2-182t2.pdf pdf_icon

BDY25B

BDY23, 180 T2BDY24, 181 T2BDY25, 182 T2NPN SILICON TRANSISTORS, DIFFUSED MESALF Large Signal Power AmplificationHigh Current Fast SwitchingABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDY23, 180T2 60Collector-Emitter VoltageVCEO BDY24, 181T2 90 VBDY25, 182T2 140BDY23, 180T2 60VCBO Collector-Base Voltage BDY24, 181T2 100 VBDY25, 182T2 200BDY23, 180T2VEBO Emitt

 9.2. Size:168K  comset
 bdy23 bdy24 bdy25 180t2 181t2 182t2.pdf pdf_icon

BDY25B

BDY23, 180 T2BDY24, 181 T2BDY25, 182 T2NPN SILICON TRANSISTORS, DIFFUSED MESALF Large Signal Power AmplificationHigh Current Fast SwitchingABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDY23, 180T2 60VCEO Collector-Emitter Voltage BDY24, 181T2 90 VBDY25, 182T2140BDY23, 180T260VCBO Collector-Base Voltage BDY24, 181T2 100 VBDY25, 182T2 200BDY23, 180T2VEBO Emit

 9.3. Size:211K  inchange semiconductor
 bdy25.pdf pdf_icon

BDY25B

isc Silicon NPN Power Transistor BDY25DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V )= 0.6V(Max)@ I = 2ACE(sat CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for LF signal powe amplifier applications.ABSOLUTE MAXIMUM RAT

MOSTRAR MÁS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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