BDY26A Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDY26A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 87 W
Tensión colector-base (Vcb): 300 V
Tensión colector-emisor (Vce): 180 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 10 MHz
Ganancia de corriente contínua (hFE): 15
Encapsulados: TO3
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BDY26A datasheet
bdy26-bdy27-bdy28-183t2-184t2-185t2.pdf
COMSET SEMICONDUCTORS BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY26, 183T2 180 VCEO Collector-Emitter Voltage BDY27, 184T2 200 V BDY28, 185T2 250 BDY26, 183T2 300 VCBO Collector-Base Voltage BDY27, 184T2 400 V BDY28, 185T2 50
bdy26.pdf
isc Silicon NPN Power Transistor BDY26 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V(Min.) (BR)CEO Collector-Emitter Saturation Voltage- V )= 0.6V(Max)@ I = 2A CE(sat C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RAT
bdy26c.pdf
isc Silicon NPN Power Transistor BDY26C DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V(Min.) (BR)CEO Collector-Emitter Saturation Voltage- V )= 0.6V(Max)@ I = 2A CE(sat C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RA
Otros transistores... BDY24A , BDY24B , BDY24C , BDY25 , BDY25A , BDY25B , BDY25C , BDY26 , B772 , BDY26B , BDY26C , BDY27 , BDY27A , BDY27B , BDY27C , BDY28 , BDY28A .
History: BDY23A
History: BDY23A
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