BDY26A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDY26A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 87 W
Tensión colector-base (Vcb): 300 V
Tensión colector-emisor (Vce): 180 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10 MHz
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar BDY26A
BDY26A Datasheet (PDF)
bdy26-bdy27-bdy28-183t2-184t2-185t2.pdf
COMSETSEMICONDUCTORSBDY26, 183 T2BDY27, 184 T2BDY28, 185 T2NPN SILICON TRANSISTORS, DIFFUSEDMESALF Large Signal Power AmplificationHigh Current Fast SwitchingABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDY26, 183T2 180VCEO Collector-Emitter Voltage BDY27, 184T2 200 VBDY28, 185T2 250BDY26, 183T2 300VCBO Collector-Base Voltage BDY27, 184T2 400 VBDY28, 185T2 50
bdy26.pdf
isc Silicon NPN Power Transistor BDY26DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V(Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V )= 0.6V(Max)@ I = 2ACE(sat CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for LF signal powe amplifier applications.ABSOLUTE MAXIMUM RAT
bdy26c.pdf
isc Silicon NPN Power Transistor BDY26CDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V(Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V )= 0.6V(Max)@ I = 2ACE(sat CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for LF signal powe amplifier applications.ABSOLUTE MAXIMUM RA
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
