BF120 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORS DATA SHEETBF1201; BF1201R; BF1201WRN-channel dual-gate PoLo MOS-FETsProduct specification 2000 Mar 29Supersedes data of 1999 Dec 01NXP Semiconductors Product specificationBF1201; BF1201R;N-channel dual-gate PoLo MOS-FETsBF1201WRFEATURES PINNING Short channel transistor with high PIN DESCRIPTIONhandbook, 2 columns 43forward transfer ad

BF1208DDual N-channel dual gate MOSFETRev. 01 16 May 2007 Product data sheet1. Product profile1.1 General descriptionThe BF1208D is a combination of two dual gate MOSFET amplifiers with shared sourceand gate2 leads and an integrated switch. The integrated switch is operated by the gate1bias of amplifier B.The source and substrate are interconnected. Internal bias circuits en

DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageMBD128BF1205Dual N-channel dual gate MOS-FETProduct specification 2003 Sep 30NXP Semiconductors Product specificationDual N-channel dual gate MOS-FET BF1205FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTIONpackage. One with a fully integrated bias and one with a 1gate

DISCRETE SEMICONDUCTORS DATA SHEETBF1202; BF1202R; BF1202WRN-channel dual-gate PoLo MOS-FETsProduct specification 2010 Sep 16Supersedes data of 2000 Mar 29NXP Semiconductors Product specificationN-channel dual-gate PoLo MOS-FETs BF1202; BF1202R; BF1202WRFEATURES PINNING Short channel transistor with high PIN DESCRIPTIONhandbook, 2 columns 43forward transfer admi

BF1207Dual N-channel dual gate MOSFETRev. 01 28 July 2005 Product data sheet1. Product profile1.1 General descriptionThe BF1207 is a combination of two dual gate MOSFET amplifiers with shared sourceand gate2 leads and an integrated switch.The source and substrate are interconnected. Internal bias circuits enable Direct Current(DC) stabilization and a very good cross-modulati

DISCRETE SEMICONDUCTORSDATA SHEETBF1201; BF1201R; BF1201WRN-channel dual-gate PoLoMOS-FETsProduct specification 2000 Mar 29Supersedes data of 1999 Dec 01Philips Semiconductors Product specificationBF1201; BF1201R;N-channel dual-gate PoLo MOS-FETsBF1201WRFEATURES PINNING Short channel transistor with highPIN DESCRIPTIONhandbook, 2 columns 43forward transfer ad

DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageMBD128BF1204Dual N-channel dual gate MOS-FETProduct specification 2010 Sep 16Supersedes data of 2001 Apr 25NXP Semiconductors Product specificationDual N-channel dual gate MOS-FET BF1204FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTIONpackage1gate 1 (a) Superi

BF1205CDual N-channel dual gate MOS-FETRev. 02 15 August 2006 Product data sheet1. Product profile1.1 General descriptionThe BF1205C is a combination of two dual gate MOS-FET amplifiers with shared sourceand gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1bias of amplifier b.The source and substrate are interconnected. Internal bias circ

DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageMBD128BF1203Dual N-channel dual gate MOS-FETProduct specification 2001 Apr 25Supersedes data of 2000 Dec 04NXP Semiconductors Product specificationDual N-channel dual gate MOS-FET BF1203FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTIONpackage1 gate 1 (a) Super

BF1206FDual N-channel dual gate MOSFETRev. 01 30 January 2006 Product data sheet1. Product profile1.1 General descriptionThe BF1206F is a combination of two different dual gate MOSFET amplifiers with sharedsource and gate2 leads.The source and substrate are interconnected. Internal bias circuits enable Direct Current(DC) stabilization and a very good cross-modulation perform

DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageMBD128BF1206Dual N-channel dual-gate MOS-FETProduct specification 2003 Nov 17NXP Semiconductors Product specificationDual N-channel dual-gate MOS-FET BF1206FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTIONpackage1 drain (b) Superior cross-modulation performance

DISCRETE SEMICONDUCTORSDATA SHEETBF1202; BF1202R; BF1202WRN-channel dual-gate PoLoMOS-FETsProduct specification 2000 Mar 29Supersedes data of 1999 Dec 01Philips Semiconductors Product specificationBF1202; BF1202R;N-channel dual-gate PoLo MOS-FETsBF1202WRFEATURES PINNING Short channel transistor with highPIN DESCRIPTIONhandbook, 2 columns 43forward transfer ad

Mar.2020 LEGM75BF120L5H IGBT Power Module Features: Applications: VCE=1200V IC=75A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type Package Package Type & Internal Circuit L5 Internal Circuit Maximum Rated ValuesIGBT Inverter Symbol Parame